2026:

1.Xitong An, Yan Wang, Chao Dou, Haoyue Li, Yueying Li, Xuan Deng, Dong Sun and Jing Liu*, “A non-monotonic reconfigurable neural unit with dynamic integration control for advanced neuromorphic computing,” Nature Communications under review (2026)

2.Zhida Hu, Shuangqing Fan*, Shun Hu, Yanqing Wang, Yuqing Cui, Shuaicai Liu, Jie Su*, Enxiu Wu, Jing Liu*, “European Robin-inspired zero-power artificial synapse with navigation capabilities,” Nature Communications under review (2026).

3.Delang Liang, Shiyu Wang, Yan Wang, Dong Li, Yuchun Chen, Bin Cheng, Mingyang Qin, Dehong Yang, Jie Sheng, Lin Li, Changgan Zeng, Dong Sun*, Anlian Pan* and Jing Liu*, “Ultrafast non-volatile Weyl LuminoMem for mid-infrared in-memory computing,” Nature Communications accepted (2026).

4.Yan Wang, Chenxi Meng, Haoyue Lu, Rui Jing, Weihua Wang* and Jing Liu*, “Anti-ambiploar devices based on 2D tellurium with surface selenium dopants for multivalued logic,” ACS Applied Materials & Interfaces accepted (2026).

5.Xuan Deng, Chao Dou, Haoyue Lu, Jing Liu*, “Acoustic-driven enhancement of photocarrier separation in a reconfigurable WSe₂ homojunction,” ACS Applied Materials & Interfaces 18(6), 10213-10221 (2026).

6.Haoyue Lu, Yan Wang, Hao Sun and Jing Liu*, “Dual-gate ambipolar MoTe₂ transistor enabled reconfigurable logic and memory for next-generation computing,” Advanced Functional Materials accepted (2026).

7.Chao Dou, Yan Wang, Haoyue Lu, Ruoyao Sun, Xuan Deng, Yueying Li and Jing Liu*, “Reconfigurable dual-terminal WSe₂/h-BN p-n photodetectors for in-sensor RGB convolution and motion detection,” ACS Nano 20(7), 5781–5791 (2026).

8.Ruoyao Sun, Chao Dou, Yan Wang, Liefeng Feng* and Jing Liu*, “High-performance h-BN dielectric memristors for neuromorphic computing and secure RGB image encryption,” Chemical Engineering Journal 530, 173659 (2026).

2025:

9.Xuchen Han, Yan Wang, Haoyue Lu, Xuan Deng, Qiankun Zhang and Jing Liu*, “Ambipolar degeneracy breaking via surface acoustic wave-driven bidirectional carrier transport in optically reconfigurable MoTe₂/h-BN heterostructure,” Nano Research 18(8), 94907543 (2025).

10.Yan Wang, Yuan Huang, Shuangqing Fan, Haoyue Lu and Jing Liu*, “Heterosynaptic MoSe₂ memtransistor array with ultra-low operating voltage and linear plasticity for neuromorphic computing,” Chemical Engineering Journal 513, 163079 (2025).

11.Budan Pei, Xuchen Han, Yan Wang, Jing Liu*, “Dual-functional optoelectronic synaptic device based on MoTe2/h-BN transistor through ultraviolet light induced doping,” Small 21(23), 2500189 (2025).

2024:

12.Haoyue Lu, Yan Wang, Xuchen han and Jing Liu*, “Ultrafast multi-bit memory based on ReS2/h-BN/graphene heterostructure,” ACS Nano 18(34), 23403 (2024).

13.Mengke Jia#, Xuesong Zhu#, Enxiu Wu and Jing Liu*, “Flexible gas sensor based on molybdenum telluride/molybdenum disulfide heterostructure,” IEEE Sensors Journal 24(11), 17403 (2024).

14.Yashuai Qi, Jing Tang, Shuangqing Fan*, Chunhua An, Enxiu Wu and Jing Liu*, “Dual interactive mode human-machine interfaces based on triboelectric nanogenerator and IGZO/In₂O₃ heterojunction synaptic transistor,” Small Methods 8(10), 2301698 (2024).

15.Shipeng Sun, Jinxi Zhang, Qiankun Zhang* and Jing Liu*, “Manipulation of charge transport in MoS₂/MoTe₂ field effect transistors and heterostructure by propagating surface acoustic wave,” ACS Applied Materials & Interfaces 16(16), 20886 (2024).

2023:

16.Shuangqing Fan, Enxiu Wu, Sunyingyue Geng, Jie Su* and Jing Liu*, “Flexible In-Ga-Zn-N-O synaptic transistor for ultralow-power neuromorphic computing and EEG-based brain-computer interfaces,” Materials Horizons 10, 4317-4328 (2023).

17.Sunyingyue Geng, Shuangqing Fan*, Hangfei Li, Yashuai Qi, Chunhua An, Enxiu Wu, Jie Su*, Jing Liu*, “An artificial neuromuscular system for bimodal human-machine interaction,” Advanced Functional Materials 33(31), 2302345 (2023).

18.Xuesong Zhu#, Dahao Wu#, Shengzhi Liang and Jing Liu*, “Strain insensitive flexible photodetector based on molybdenum ditelluride/molybdenum disulfide heterostructure,” Nanotechnology 34(15), 155502 (2023).

19.Jinxi Zhang#, Chen Wu#, Qiankun Zhang* and Jing Liu*, “Mechano/acousto-electric coupling between ReS₂ and surface acoustic wave,” Nanotechnology 34(15), 155501 (2023).

2022:

20.Xinli Ma, Jinxi Zhang, Yang Sun, Chen Wu, Guangyu Geng, Jing Zhang, Enxiu Wu, Linyan Xu, Sen Wu, Xiaodong Hu and Jing Liu*, “Engineering of oxidized line defects on CVD-grown MoS₂ flakes,” ACS Applied Materials & Interfaces 14(41), 47288-47299 (2022).

21.Shijie Wang, Guangyu Geng, Yang Sun, Sen Wu, Xiaodong Hu, Enxiu Wu*, Jing Liu*, “Flash memory based on MoTe2/boron nitride/graphene semi-floating gate heterostructure with non-volatile and dynamically tunable polarity,” Nano Research 15(7), 6507-6514 (2022).

2021:

22.Yang Sun#, Ruixue Hu#, Chunhua An, Xinli Ma, Jing Zhang and Jing Liu*, “Visible to near-infrared photodetector based on SnSe₂/WSe₂ heterojunction with potential application in artificial visual neuron,” Nanotechnology 32(47), 475206 (2021).

23.Jing Zhang, Xinli Ma, Xiaoming Song, Xiaodong Hu, Enxiu Wu* and Jing Liu*, “UV light modulated synaptic behavior of MoTe₂/BN heterostructure,” Nanotechnology 32(47), 475207 (2021).

24.Chunhua An#, Zhihao Xu#, Jing Zhang, Enxiu Wu, Xinli Ma, Yidi Pang, Xiao Fu, Xiaodong Hu, Dong Sun, Jinshui Miao*, Jing Liu*, “Anisotropic photoresponse of layered rhenium disulfide synaptic transistors,” Chinese Physics B 30(8), 088503 (2021)

25.Xinli Ma, Jing Zhang, Jiawei Lai, Mingwen Zhang, Jingchuan Zheng, Sen Wu, Xiaodong Hu, Qinsheng Wang, Xuetao Gan, Dong Sun and Jing Liu*, “Gradient rhenium doping enabled tunable anisotropic valleytronic material based on monolayer molybdenum disulfide,” 2D Materials 8(3), 035031 (2021).

26.Yuan Xie, Enxiu Wu*, Guangyu Geng, Daihua Zhang, Xiaodong Hu and Jing Liu*, “Gate-tunable van der Waals heterostructure based on semimetallic WTe₂ and semiconducting MoTe₂,” Applied Physics Letters 118, 133103 (2021).

27.Yuan Xie, Enxiu Wu*, Shuangqing Fan, Guangyu Geng, Xiaodong Hu*, Linyan Xu, Sen Wu, Jing Liu* and Daihua Zhang, “Modulation of MoTe₂/MoS₂ van der Waals heterojunction for multifunctional devices using N₂O plasma with opposite doping effect,” Nanoscale 13(16), 7851-7860 (2021).

28.Chuanhua An, Fengmin Nie, Rongjie Zhang, Xinli Ma, Dahao Wu, Yang Sun, Xiaodong Hu, Dong Sun, Li Pan and Jing Liu*, “Two-dimensional material-enhanced flexible and self-healable photodetector for large-area photodetection,” Advanced Functional Materials 31(22) 2100136 (2021).

29.Yidi Pang, Enxiu Wu, Zhihao Xu, Xiaodong Hu, Sen Wu, Linyan Xu and Jing Liu*, “Effect of electrical contact on the performance of WSe₂ field effect transistor,” Chinese Physics B 6(30), (2021).

30.Chunhua An, Hui Qi, Longfei Wang, Xing Fu, Aochen Wang*, Zhonglin Wang*, and Jing Liu*, “Piezotronic and piezo-phototronic effects of atomically-thin ZnO nanosheets,” Nano Energy 82, 105653 (2021).

2020:

31.Hao Yao, Enxiu Wu* and Jing Liu*, “Frequency doubler based on single MoTe₂/MoS₂ anti-ambipolar heterostructure,” Applied Physics Letters 117, 123103 (2020).

32.Enxiu Wu*, Yuan Xie, Shijie Wang, Daihua Zhang, Xiaodong Hu* and Jing Liu*, “Multi-level flash memory device based on stacked anisotropic ReS₂-boron nitride-graphene heterostructures,” Nanoscale 12(36), 18800-18806 (2020).

33.Enxiu Wu*, Yuan Xie, Shijie Wang, Daihua Zhang, Xiaodong Hu* and Jing Liu*, “Non-volatile programmable homogeneous lateral MoTe₂ junction for multi-bit flash memory and high-performance optoelectronics,” Nano Research 13(12), 3445–3451 (2020).

34.Enxiu Wu*, Yuan Xie, Shijie Wang, Chen Wu, Daihua Zhang, Xiaodong Hu* and Jing Liu*, “Tunable and nonvolatile multibit data storage memory based on MoTe₂/boron nitride/graphene heterostructures through contact engineering,” Nanotechnology 31(48), 485205 (2020).

35.Jing Liu, Fengnian Xia, Di Xiao, F. Javier García de Abajo, Dong Sun*, “Semimetals for high performance photodetection,” Nature Materials 19(8), 830-837 (2020).

2019:

36.Shuangqing Fan*, Xiaodong Tang, Daihua Zhang, Xiaodong Hu, Jing Liu*, Lijun Yang*, Jie Su*, “Ambipolar and n/p-type conduction enhancement of two-dimensional materials by charge transfer doping,” Nanoscale 11(32), 15359-15366 (2019).

37.Ruixue Hu, Xinli Ma, Chunhua An, and Jing Liu*, “Visible-to-near-infrared photodetector based on graphene-MoTe₂-graphene heterostructure,” Chinese Physics B 28(11), 117802 (2019).

38.Ruixue Hu, Enxiu Wu, Yuan Xie, and Jing Liu*, “Multifunctional anti-ambipolar p-n junction based on MoTe₂/MoS₂ heterostructure,” Applied Physics Letters 115(7), 073104 (2019).

39.Rongjie Zhang, Xinli Ma, Chunhua An, Daihua Zhang, Dong Sun, Xiaodong Hu and Jing Liu*, “Self-powered photodetector based on vertical MoO₃/MoS₂ heterostructure with gate tunable photo-response,” 2D Materials 6(3), 035033 (2019).

40.Enxiu Wu, Yuan Xie, Qingzhou Liu, Xiaodong Hu, Jing Liu*, Daihua Zhang* and Chongwu Zhou, “Photoinduced doping to enable tunable and high-performance anti-ambipolar MoTe₂/MoS₂ heterotransistors,” ACS Nano 13(5), 5430-5438 (2019).

41.Yuan Xie, Enxiu Wu, Jing Zhang, Xiaodong Hu, Daihua Zhang*, and Jing Liu*, “Gate tunable photodetection/voltaic device based on BP/MoTe₂ heterostructure,” ACS Applied Materials & Interfaces 11(15), 14215-14221 (2019).

42.Rongjie Zhang, Chunhua An, Linyan Xu, Sen Wu, Daihua Zhang, Xiaodong Hu and Jing Liu*, “Homogenous tunnel diode based two-dimensional molybdenum disulfide with light induced n+ doping,” ACS Applied Electronics Materials 1(4), 523-529 (2019).

43.Chunhua An, Zhihao Xu, Wanfu Shen, Rongjie Zhang, Zhaoyang Sun, Shuijing Tang, Yunfeng Xiao, Daihua Zhang, Xiaodong Hu, Chunguang Hu, Lei Yang* and Jing Liu*, “The opposite anisotropic piezoresistance effect of ReS₂,” ACS Nano 13(3), 3310-3319 (2019).

44.Enxiu Wu, Yuan Xie, Hao Zhang, Xiaodong Hu, Chongwu Zhou*, Jing Liu* and Daihua Zhang*, “Dynamically controllable polarity modulation of MoTe₂ field-effect transistors through ultraviolet light and electrostatic actuation,” Science Advances 5(5), 3430 (2019).

45.Shuangqing Fan, Jingsi Qiao, Jiawei Lai, Haicheng Hei, Zhihong Feng, Qiankun Zhang, Daihua Zhang, Sen Wu, Xiaodong Hu, Dong Sun, Wei Ji* and Jing Liu*, “Wet chemical method for black phosphorus thinning and passivation,” ACS Applied Materials & Interfaces 11(9), 9213-9222 (2019).

46.Xinli Ma, Chunhua An, Sen Wu, Xiaodong Hu and Jing Liu*, “Efficient doping modulation of monolayer WS₂ for optoelectronic applications,” Chinese Physics B 28(3), 037803 (2019).

47.Shengping Wang, Ruijie Zhang, Lianying Zhang, Liefeng Feng and Jing Liu*, “Accurate change of carrier types within ultrathin MoTe₂ field-effect transistor with the time exposed to ambient air,” Journal of Materials Science 54(4), 3222-3229 (2019).